دیتاشیت FF200R12KT4
مشخصات دیتاشیت
| نام دیتاشیت |
FF200R12KT4
|
| حجم فایل |
111.116
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
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RoHS:
true
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Type:
IGBT Modules
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Infineon Technologies FF200R12KT4
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Operating Temperature:
-40°C~+150°C@(Tvjop)
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Collector Current (Ic):
320A
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Power Dissipation (Pd):
1.1kW
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Turn?on Delay Time (Td(on)):
160ns
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Input Capacitance (Cies@Vce):
1.4nF@25V
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Turn?on Switching Loss (Eon):
10mJ
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Diode Forward Voltage (Vf@If):
1.65V@200A
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Total Gate Charge (Qg@Ic,Vge):
-
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Turn?off Delay Time (Td(off)):
450ns
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Pulsed Collector Current (Icm):
400A
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Turn?off Switching Loss (Eoff):
14mJ
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Diode Reverse Recovery Time (Trr):
-
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Collector Cut-Off Current (Ices@Vce):
5mA@1.2kV
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Collector-Emitter Breakdown Voltage (Vces):
1.2kV
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.8V@7.6mA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge):
1.75V@200A,15V
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Package:
-
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Manufacturer:
Infineon Technologies
